肖尊鹏,梁兴旺,郭睿昂,张宇飞,贾港媛,王凯悦

• 1:太原科技大学材料科学与工程学院

摘要(Abstract)：

利用光致发光光谱研究了200 keV电子辐照β-Ga_2O_3光学色心的功率依赖性。经过对比辐照前后样品，发现光谱中684 nm、690 nm和697 nm零声子线强度发生了明显的变化，而且在715 nm红光区域处出现了一个宽带。通过线扫描光致发光光谱图发现在辐照区域中心处发光强度最强，在边缘区域强度逐渐减弱。为了进一步了解光学色心的性质，并且进一步了解β-Ga_2O_3样品缺陷的性质。对β-Ga_2O_3样品进行了激光功率依赖性的研究，研究发现β-Ga_2O_3光学色心主要受到辐射复合和俄歇复合协同作用的影响，且684 nm零声子线受俄歇复合影响最大。

关键词(KeyWords)： β-Ga_2O_3;光学色心;辐射复合;俄歇复合

Abstract:

Keywords:

基金项目(Foundation): 国家自然科学基金(61705176)

作者(Author): 肖尊鹏,梁兴旺,郭睿昂,张宇飞,贾港媛,王凯悦

参考文献(References)：

• [1] 陶绪堂，穆文祥，贾志泰.宽禁带半导体氧化镓晶体和器件研究进展[J].中国材料进展，2020,39(2):113-123.
• [2] CORA I,FOGARASSY ZS,FORNARI R.In situ TEM study ofκ→β and κ→γ phase transformations in Ga2O3[J].Acta Materialia,2020,183:216-227.
• [3] HU D,ZHUANG S W,MA Z Z,et al.Study on the optical properties of β-Ga2O3 films grown by MOCVD[J].Journal of Materials Science:Materials in Electronics,2017,28:10997-11001.
• [4] KIM S W,LEE HJ,OH S,et al.Transparent conductive electrodes of β-Ga2O3/Ag/β-Ga2O3 multilayer for ultraviolet emitters[J].Journal of Nanoscience and Nanotechnology,2017,19:6328-6333.
• [5] GIRIJA K,THIRUMALAIRAJANS,AVADHANI G S,et al.Synthesis,morphology,optical and photocatalytic performance of nanostructured β-Ga2O3[J].Materials Research Bulletin,2013,48:2296-2303.
• [6] 王凯悦，李志宏，田玉明，等.金刚石中GR1中心的光致发光特性研究[J].物理学报，2013,62(6):067802.
• [7] LORENZ M R,WOODS J F,GAMBINO R J.Some electrical properties of the semiconductorβ-Ga2O3[J].Journal of Physics and Chemistry of Solids,1967,28:403-404.
• [8] 练小正，张胜男，程红娟，等.导模法生长大尺寸高质量β-Ga2O3单晶[J].半导体材料，2018,43(8):662-626
• [9] RODRIGUES A V,ORLANDI M O.Study of intense photoluminescence from monodispersed β-Ga2O3 ellipsoidal structures[J].Ceramics International,2019,45:5023-5029.
• [10] ZHAO Y Y,FROST R L.Raman spectroscopy and characterisation of α-gallium oxyhydroxide and β-gallium oxide nanorods[J].Journal of Raman Spectroscopy,2008,39:1494-1501.
• [11] NOGALES E,MéNDEZ B,PIQUERAS J.Cathodoluminescence from β-Ga2O3 nanowires[J].Applied Physics Letters,2005,86:113112.
• [12] SONG Y P,ZHANG H Z,LIN C,et al.Luminescence emission originating from nitrogen doping of β-Ga2O3 nanowires[J].Physical Review B,2004,69:075304.
• [13] SHKLYAEV A A,VOLODIN V A,STOFFEL M,et al.Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100)induced by dewetting[J].Journal of Applied Physics,2018,123:015304.
• [14] SEETOH I P,SOH C B,FITZGERALD E A,et al.Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence[J].Applied Physics Letters,2013,102:101112.
• [15] GUO RUIANG,WANG KAIYUE,ZHANG YUFEI,et al.Adjustable charge states of nitrogen-vacancy centers in low-nitrogen diamond after electron irradiation and subsequent annealing[J].Applied Physics Letters,2020,117:172104.