点缺陷对4H-SiC的影响Effect of Point Defect on 4H-SiC
苏晋阳,郭瑞贤,刘淑平
摘要(Abstract)：
碳化硅(SiC)是一种新型的宽禁带半导体材料,但在实际生产过程中存在各种缺陷。通过第一性原理平面波法计算了4H-SiC薄膜上的碳空位缺陷(V_C)和硅空位缺陷(V_(Si))的态密度从而得出不同缺陷对4H-SiC材料的影响。并在此基础上计算了磷原子和硼原子掺杂,得出两种不同的掺杂类型对4H-SiC材料造成的影响;并计算了缺陷的形成能,通过对比形成能得出哪种缺陷更容易形成。
关键词(KeyWords)： 4H-SiC;第一性能原理;态密度;点缺陷
基金项目(Foundation): 山西省重点实验室开放基金(201712)
作者(Author): 苏晋阳,郭瑞贤,刘淑平
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