单个砷原子在砷化镓富砷表面的迁移行为Diffusion Behaviors of an Extra As Atom on GaAs As-rich Surface
李坤,杨雯,杜诗文
摘要(Abstract):
采用分子动力学方法计算了单个砷原子在砷化镓(001)β2(2×4)富砷表面迁移的势能面,研究了砷原子在该表面上的迁移行为。结果表明,在该表面存在一部分低能量的吸附位和一条平行于砷二聚体的迁移路径。且在这条迁移路径中,砷原子迁移所需要跃过的势垒均小于0.6 eV.因此在常温情况下,砷原子有可能在这条迁移路径中聚合成团簇。
关键词(KeyWords): 表面;原子迁移;分子动力学模拟
基金项目(Foundation): 高等学校博士学科点专项科研基金(20111415120002);; 国家自然科学基金青年科学基金(11204199);; 山西省高等学校创新人才支持计划(2013);; 太原科技大学青年科技研究基金(20113020)
作者(Author): 李坤,杨雯,杜诗文
参考文献(References):
- [1]OHTAKE A.Surface reconstructions on GaAs(001)[J].Surf Sci R,2008,63:295-327.
- [2]XUE Q K,HASHIZUME T,SAKURAI T.Scanning tunneling microscopy ofⅢ-Ⅴcompound semiconductor(001)surfaces[J].Prog Surf Sci,1997,56(1-2),1-131.
- [3]TERESHCHENKO O E,CHIKICHEV S I,TEREKHOV A S.Composition and structure of HCl-isopropanol treated and vacuum annealed GaAs(100)surfaces[J].J Vac Sci Technol A,1999,17(5):2655-2662.
- [4]THOMAS J C,VEN A V,MILLUNCHICK J M.Considerations for surface reconstruction stability prediction on GaAs(001)[J].Phys Rev B,2013,87(7):075320.
- [5]HASHIZUME T,XUE Q K,ZHOU J,et al.Structures of As-Rich GaAs(001)-(2×4)Reconstructions[J].Phys Rev Lett,1994,73(16):2208-2211.
- [6]HASHIZUME T,XUE Q K,ICHIMIYA A,et al.Determination of the surface structures of the GaAs(001)-(2×4)As-rich phase[J].Phys Rev B,1995,51(7):4200-4212.
- [7]THOMAS J C,MODINE N A,MILLUNCHICK J M.Systematic approach for determination of equilibrium atomic surface structure[J].Phys Rev B,2010,82(16):165434.
- [8]TSUKAMOTO S,KOGUCHI N.Magic numbers in Ga clusters on GaAs(001)surface[J].J Cryst Growth,2000,209(2-3):258-262.
- [9]ALBE K,NORDLUND K,AVERBACK R S.Modeling of compound semiconductors:Analytical bond-order potential for Ga,As,and GaAs[J].Phys Rev B,2002,66(3):035205.
- [10]BRENNER D.Relationship between the Embedded-Atom Method and Tersoff Potentials[J].Phys Rev Lett,1989,63(9):1022.
- [11]NORTHRUP J E,FROYEN S.Structure of GaAs(001)surfaces:The role of electrostatic interactions[J].Phys Rev B,1994,50(3),2015-2018.
- [12]LABELLA V P,YANG H,BULLOCK D W,et al.Atomic Structure of the GaAs(001)-(2×4)Surface Resolved Using Scanning Tunneling Microscopy and First-Principles Theory[J].Phys Rev Lett,1999,83(15):2989-2992.